LSM835GE3/TR13 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Microchip

Model:

LSM835GE3/TR13

Description:

DIODE SCHOTTKY 35V 8A DO215AB

Stock:

1521

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.16

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

Email：3469113929@qq.com

Parameters

Capacitance at different Vr and F

Current - reverse leakage at different Vr

2 mA @ 35 V

Current average rectification (Io)

Diode type

Schottky barrier

Reverse recovery time (trr)

Supplier device packaging

DO-215AB

Voltage DC reverse (Vr) (maximum)

35 V

Voltage at different If - forward (Vf)

520 mV @ 8 A

packing

series

speed

Rapid recovery=< 500ns,> 200mA(Io)

working temperature

Encapsulation/Housing

DO-215AB,SMC Gull wing

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

LSM835GE3/TR13（Diode rectifier）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1521,Price reference "real-time change" China/Hongkong。 LSM835GE3/TR13 package/specs, Download LSM835GE3/TR13、Datasheet。